The primary disadvantage of using conventional bipolar metal-gate CMOS for linear applications is the unavoidable threshold-voltage shifts that take place with time and with changes in temperature and gate voltage. These shifts (caused by the movement of sodium ions within the device transistor) are frequently more than 10 mV/v of applied gate voltage. However, LinCMOS technology overcomes this problem by replacing the metal gates with phosphorus-doped polysilicon gates that bind the sodium ions. The result is linear integrated circuits with low (2 to 10 mV) input-offset voltages that vary no more than a few microvolts from their original values.
The TLC251 and TLC271 series of general-purpose operational amplfiers have low input offset voltages that typically vary only 0.1 uV per month and 0.7 uV per degree Celsius. The extremely low offset voltage can be reduced even further by using the offset null pins on the device. Unlike metal-gate CMOS devices, the input-offset voltage of LinCMOS devices is not sensitive to input-overdrive voltages.